Appeal No. 96-1271
Application No. 08/190,388
Representative independent claim 1 is reproduced as
follows:
1. A semiconductor device, comprising:
a collector impurity region of a first conductivity-type;
a base impurity region of a second conductivity-type
having a first impurity concentration formed in a
predetermined region on the main surface of said collector
impurity region;
an emitter impurity region of the first conductivity-type
having a first depth formed in a predetermined region on the
main surface of said based [sic, base] impurity region; and
a base contact impurity region of the second
conductivity-type having a second impurity concentration
higher than said first impurity concentration and a second
depth shallower than said first depth formed on the main
surface of said based [sic, base] impurity region spaced apart
by a predetermined distance from said emitter impurity region,
said base contact impurity region having a metal silicide
layer formed thereon, said metal silicide layer including one
metal silicide selected from the group consisting of TiSi ,
x
HfSi , VSi , TaSi , MoSi , and WSi .x x x x x
The examiner relies on the following references:
Lechaton et al. 4,752,817 Jun. 21, 1988
(Lechaton)
Welch et al. 4,980,738 Dec. 25, 1990
(Welch)
Prior art figs. 28 through 31 and 34
3
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