Appeal No. 95-2914 Page 3
Application No. 07/447,969
patterning said amorphous silicon film to form in said
opening at said selected location an amorphous silicon
feature, said feature contacting and fully overlaying said
first conductor portion; and
fabricating a second conductor, wherein a portion of said
second conductor contacts and overlays said amorphous silicon
feature;
wherein the process parameters of said plasma enhanced
chemical vapor deposition include a temperature and gaseous
environment selected to yield a leakage current at said
location of less than about 10 nanoamperes at 5.5 volts.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Ovshinsky et al. (Ovshinsky I) 4,217,374 Aug. 12,
1980
Ovshinsky et al. (Ovshinsky II) 4,226,898 Oct. 07,
1980
Holmberg et al. (Holmberg I) 4,499,557 Feb.
12, 1985
Holmberg et al. (Holmberg II) 4,599,705 July
08, 1986
Kanai et al. (Kanai) 4,771,015 Sep. 13,
1988
Cook et al., Amorphous Silicon Antifuse Technology For Bipolar
Proms, IEEE Bipolar Circuits and Technology Meeting, 1986, pp.
99 and 100, (Cook).
Claims 1-6, 28, and 32-34 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Holmberg I or II each in view
of any of Ovshinsky I, Ovshinsky II, or Kanai.
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