Appeal No. 95-3885
Application 08/172,051
DECISION ON APPEAL
This is a decision on appeal from the final rejec-
tion of claims 1, 3 and 5 through 8, all of the claims pending
in the present application. Claims 2 and 4 have been can-
celed.
The invention relates to a diode suited for absorb-
ing a surge utilizing a high resistivity layer to heat the pn
junction during overcurrent so as to cause a secondary break-
down of the diode whereby a surge current is absorbed by
utilizing Zener breakdown of the pn junction.
The independent claim 1 is reproduced as follows:
1. A diode comprising:
a semiconductor substrate;
a pn junction provided in the semiconductor
substrate; and
an exothermic body for heating the pn junction
under an overcurrent, said exothermic body being provided in a
neighborhood of the pn junction wherein the exothermic body is
a semiconductor layer formed below the pn junction.
2
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