Appeal No. 95-3885
Application 08/172,051
that Muller, Shockley and Gosch fail to teach forming an
exothermic body below a pn junction for heating the pn junc-
tion under an overcurrent as claimed in Appellant's claim 1.
Appellant further argues that Muller, Shockley and Gosch fail
to teach forming a first epitaxial layer of a first conductiv-
ity type with a high resistivity between a semiconductor
substrate and a second epitaxial layer as claimed in Appel-
lant's claim 5. Finally, Appellant argues that Muller,
Shockley and Gosch fail to teach providing an exothermic body
below a pn junction and between a semiconductor layer and a
substrate as claimed in claim 8.
In the answer, the Examiner argues pages 3 and 4 as
well as on pages 6 and 7 that the prior art teaches the
claimed structure and that the combination of Muller, Shockley
and Gosch is proper. In particular, the Examiner points out
on page 3 that Muller teaches "an ordinary diffused diode of a
p-type region into an n-type layer." The Examiner does not
rely on Muller for
5
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