Appeal No. 95-3885
Application 08/172,051
heating the pn junction under an overcurrent, said exothermic
body being provided in a neighborhood of the pn junction
wherein the
exothermic body is a semiconductor layer formed below the pn
junction." Emphasis added. Thus, Appellant's claim 1
requires a diode having an exothermic body for heating the pn
junction under an overcurrent.
Upon a careful review of Muller, Shockley and Gosch,
we fail to find that these references teach or suggest an
exothermic body for heating the pn junction under an
overcurrent wherein the exothermic body is a semiconductor
layer formed below the pn junction. We agree with the
Examiner that Muller is a general teaching of a pn-junction
diode and that Muller fails to teach any additional layers.
We agree with the Examiner that Gosch and Shockley teach a
resistive layer, but we fail to find that either reference
teaches an exothermic body placed below the pn junction for
heating the pn junction during an overcurrent condition as
recited in Appellant's claim 1.
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