Appeal No. 95-5041
Application No. 08/163,967
The disclosed invention relates to a high voltage
semiconductor device having an improved junction termination
extension for increasing the surface breakdown junction
voltage.
Claim 1 is the only independent claim on appeal, and it
reads as follows:
1. A high voltage semiconductor device having an
improved junction termination extension for increasing the
surface breakdown junction voltage, comprising:
a semiconductor substrate of a first electrical
conductivity type, said substrate defining a major surface
having an edge;
a first impurity region of a second electrical
conductivity type formed in said substrate and having a first
doping concentration;
a second impurity region formed in said substrate between
said first impurity region and said edge and in contact with
said first impurity region and extending on said major surface
from said first impurity region to a junction extension remote
from said first impurity region, said second impurity region
being of said second electrical conductivity type and having a
second doping concentration less than said first doping
concentration;
a first field shield plate disposed on said major surface
directly above and in electrical contact with said first
impurity region, said first field shield plate having an outer
edge terminating directly above said second impurity region
before said junction extension;
a first layer of insulating material disposed on said
major surface of said substrate and separating said first
3
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