Appeal No. 95-5041
Application No. 08/163,967
As indicated supra, Terashima is concerned with
preventing field concentration in an end portion of a
semiconductor region caused by p-n junction isolation on a
semiconductor substrate (column 1, lines 11 through 14).
Terashima discloses (Figure 3) a semiconductor substrate 12 of
a first electrical conductivity type, a first impurity region
11 of a second electrical conductivity type formed in the
substrate and having a first doping concentration, a second
impurity region 7a formed in the substrate between the first
impurity region 11 and the edge of the substrate and in
contact with the first impurity region and extending on a
major surface from the first impurity region to form a
junction extension remote from the first impurity region. The
second impurity region 7a is of the second electrical
conductivity type, and the doping concentration thereof is
less than the doping concentration of the first impurity
region 11. A first field shield plate 16e is disposed on the
major surface directly above and in electrical contact with
the first impurity region 11 (column 2, lines 5 through 12).
A layer of insulating material 14 is disposed on the major
surface of the substrate, and it separates the first field
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