Appeal No. 95-5041
Application No. 08/163,967
prior art figure[s] 2A and 3A before the PN junction
to form the depletion layer in region 28 to increase
the surface breakdown voltage as taught by
Terashima.
Appellant argues that the claimed invention, like
Terashima, reduces “the concentration of electric field that
occurs at the major surface between the high voltage and low
voltage terminals of semiconductor devices, thereby increasing
the effective breakdown voltage of such devices” (Brief, page
5). Despite the functional similarities between the claimed
invention and Terashima, appellant argues that “the present
invention attains such functionality in an entirely different
manner than does Terashima” (Brief, pages 5 and 6). Appellant
also argues (Brief, pages 8 and 9) that the teaching or
suggestion to combine the admitted prior art with Terashima is
only apparent from appellant’s disclosure.
Reference is made to the brief and the answer for further
detailed positions of the appellant and the examiner.
OPINION
We have carefully considered the entire record before us,
and we will reverse the obviousness rejection of claims 1, 4
and 5.
6
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 Next
Last modified: November 3, 2007