Appeal No. 96-0377
Application 07/979,254
and 12 have been canceled. Claims 3 and 11 have been indi-
cated as allowable.
The invention relates to a coaxial plasma processing
apparatus for etching a wafer surface without damaging charge
buildup, in the reaction region. In particular, referring to
Figure 1, chamber 3 is evacuated, a reaction gas is introduced
into the chamber 3, and electric energy is applied to outer
electrode 5. A plasma is generated in the annular space that
is defined between the chamber 3 and the inner electrode 10.
Charged particles in the plasma are prevented from passing
through the inlet holes 11 in the inner electrode 10 so that
only neutral particles pass through the holes 11 into the
reaction region for thereby etching surfaces of the wafers W.
Insulating plate 2 prevents an electric discharge from being
developed between the outer electrode 5 and the base plate 1.
As a consequence no charge buildup is developed in the reac-
tion region.
Representative independent claim 1 is reproduced as
follows:
1. A coaxial plasma processing apparatus compris-
ing:
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 Next
Last modified: November 3, 2007