Appeal No. 96-1207
Application No. 08/064,203
between two conductive layers of the device. In the method of
depositing the tunneling oxide, a silicon dioxide layer is
formed by a low pressure chemical vapor deposition (LPCVD)
process using tetraethylorthosilicate (TEOS). After the
tunneling oxide is deposited, it is subjected to an annealing
step.
Claims 13 and 14 are the only independent claims on
appeal, and they read as follows:
13. An improved tunneling region for use with an
integrated circuit comprising:
a first layer of polysilicon;
a first electron tunneling layer of thermal oxide formed
over said first layer of polysilicon;
a second electron tunneling layer of annealed deposited
silicon dioxide formed over said first tunneling layer having
a thickness less than 2000 Angstroms thick, said silicon
dioxide layer being formed by low pressure chemical vapor
deposition comprising the use of tetraethylorthosilicate; and
a second layer of polysilicon formed over said layer of
deposited silicon dioxide, such that when a bias voltage is
applied between said first layer of polysilicon and said
second layer of polysilicon, electron tunneling will occur
from said first layer of polysilicon to said second layer of
polysilicon through said first and second electron tunneling
layers.
14. A semiconductor device including means for electron
tunneling, comprising:
a first conductive layer;
2
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