Appeal No. 96-1207
Application No. 08/064,203
Although the structure of the dielectric layer
created according to the present invention is clearly
different from prior art thermal oxide layers, it is
not possible in my opinion to describe it except in
terms of the process for making this structure. As
stated in the specification, in addition to the above
differences in defect density and stress between
thermal and TEOS deposited oxides, the annealing of the
TEOS layer seems to provide a more uniform molecular
bonding by permitting greater viscous flow in the TEOS
deposited oxide thus reducing or eliminating defects in
the resulting dielectric layer. The result is, as
stated in the specification, a dielectric layer that
enables an increase of at least one order of magnitude
in the total charge conducted through the dielectric
layer, while at the same time providing a dramatic
improvement in processing yields. The structure must
be different in order to obtain this effect, but it
is
not currently within the state of the art to describe
in physical terms how this structure is different
from
an oxide layer formed entirely by thermal oxidation.
The foregoing advantages of TEOS deposited oxides versus
thermally grown oxides can be found in the specification at
page 6, line 12 through page 7, line 1.
As indicated supra, the advantages of appellant's claimed
process step are set forth in the declarations as well as in
the specification. Such advantages are sufficient to2
establish unobvious differences between the claimed product and
2A patent application and a declaration are both under
oath.
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