Appeal No. 1996-1616
Application No. 08/158,673
forming both the drain of a vertical field effect transistor
and also the cathode of a diode. Claim 1 is illustrative of
the claimed invention, and it reads as follows:
1. An integrated circuit, comprising:
(a) a vertical field effect transistor with a drain in a
first portion of a first layer of semiconductor material; and
(b) a diode with a cathode including a second portion of
said first layer and spaced from said first portion.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Müller 4,183,036 Jan. 08,
1980
Yoshida et al. (Yoshida) 4,288,800 Sep.
08, 1981
Blanchard et al. (Blanchard) 4,896,196 Jan.
23, 1990
Korman et al. (Korman) 5,111,253 May 05,
1992
Lüth 5,122,853 Jun.
16, 1992
Claim 6 stands rejected under 35 U.S.C. § 112, second
paragraph, as being indefinite.
Claim 1 stands rejected under 35 U.S.C. § 102(b) as being
anticipated by Blanchard.
Claims 2 through 5, 7, and 8 stand rejected under 35
U.S.C. § 103 as being unpatentable over Blanchard in view of
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 Next
Last modified: November 3, 2007