Appeal No. 1996-1616
Application No. 08/158,673
to the gate fingers. Accordingly, the cathode does include a
portion of the source layer. Thus, we cannot sustain the
rejection of claim 6.
The examiner rejects claim 1 as being anticipated by
Blanchard. Claim 1 requires, in pertinent part, a vertical
field effect transistor. Appellant argues that Blanchard
includes a DMOS transistor and not a vertical field effect
transistor, because the arrows in Figure 3d show current flow
beginning in the horizontal direction. Blanchard defines the
vertical DMOS transistor devices of Figure 1 (column 1, lines
14-18) as "field effect transistor (FET) cell structures in
which a common substrate drain 10 serves multiple vertical
DMOS cells" (underlining added for emphasis). The transistor
in Figure 3d, upon which the examiner relies for the rejection
of claim 1, has the same structure as that of Figure 1. In
other words, Blanchard's transistor in Figure 3d has a
"vertical" structure and is a "field effect transistor" with a
substrate drain.
Although Blanchard's vertical cell differs from
appellant's vertical field effect transistor, appellant has
not clearly
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