Appeal No. 1996-1616
Application No. 08/158,673
that the cathode cannot be part of the source layer because
"figs. (14-16) of the application (and associated explanation)
clearly shows that the cathode can only be a part of the
drain, since the source layer is separated from the diode
cathode by the gate, channels and the isolation structure."
(Final Rejection, page 1.) The examiner apparently has
limited "source layer" to only the "source." However,
appellant discloses (Specification, page 17, second full
paragraph) that "the Schottky diode has n cathode 1454 of_
thickness equal to the sum of the thickness of drain layer
1408 plus the thickness of n source layer 1402," where_
"source layer" clearly refers to the entire epitaxial layer
which includes the source, the p region, and a portion of the+
cathode. Further, appellant (Specification, page 17, last
paragraph) explains the fabrication of the diode as including
"the n- GaAs channel/source epitaxial layer overgrowth, which
forms the upper portion of cathode 1454 of Schottky diode
1450." In addition, Figure 14 clearly shows layer 1402
forming the VFET channels in
between the gate fingers, the VFET source above the gate
fingers, and the upper portion of the diode cathode adjacent
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