Appeal No. 1996-1758
Application No. 08/358,050
nonelected invention. Claims 2, 5, 15-18, and 20-23 have been
canceled.
The claimed invention relates to a single gate thin film
transistor which, according to pages 4-7 of Appellant’s
specification, is structured to moderate the electric field
concentration in the vicinity of corner portions of the gate
electrode.
Claim 1 is illustrative of the invention and reads as
follows:
1. A single gate thin film transistor, comprising:
a gate electrode formed on an insulating layer and having
opposite sidewalls;
a dielectric layer formed on said insulating layer and
covering upper and side surfaces of said gate electrode, said
dielectric layer overlying said gate electrode having a
thickness t; and
a polycrystalline silicon layer formed on an upper
surface of said dielectric layer, said polycrystalline silicon
layer having a channel region formed above said gate electrode
and having a pair of impurity regions formed respectively at
opposite sides of said channel region, said channel region
having a length equal to or greater than the length of the
gate electrodes, and a shape of said channel region having no
corners or edges conforming to a shape of the sidewalls of the
gate electrode,
an interface between said dielectric layer and said
polycrystalline silicon layer lying in a single plane
throughout a first region beneath said channel region and a
second region extending beyond each said sidewall of said gate
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 Next
Last modified: November 3, 2007