Appeal No. 1996-1758
Application No. 08/358,050
electrode by a distance greater than said thickness t of said
dielectric layer, wherein
said dielectric layer comprises a first insulating layer
formed in contact with said side wall of said gate electrode
and has a film thickness equal to that of said gate electrode
and a second insulating layer has a flat surface formed on the
surface of this first insulating layer.
The Examiner relies on the following references:
Wu 5,266,507 Nov. 30,
1993
(filed May 18, 1992)
Ishikura (Japanese Kokai) 2 58-153371 Sep. 12,
1983
Poleshuk (European) 0,102,802 Mar.
14,
1984
Claims 1, 3, 4, 10-14, 19, and 24-29 stand finally
rejected under 35 U.S.C. § 103 as being unpatentable over the
combined teachings of Poleshuk, Ishikura, and Wu.
Rather than reiterate the arguments of Appellant and the
Examiner, reference is made to the Briefs and Answer for the 3
respective details.
2A copy of the translation provided by the U. S. Patent
and Trademark Office, March 1996, is included and relied upon
for this decision.
3The Appeal Brief was filed December 27, 1995. In
response to the Examiner’s Answer dated January 31, 1996, a
Reply Brief was filed February 23, 1996 which was acknowledged
and entered by the Examiner on March 6, 1996.
3
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