Appeal No. 1996-2947
Application 08/203,685
Appellant has appealed to the Board from the examiner's
final rejection of claims 1 through 9, which constitute all
the claims in the application.
Claim 1 is reproduced below:
1. A high-speed submicron channel metal oxide
semiconductor transistor which exhibits excellent punchthrough
characteristics and which is ideal for VLSI circuits, formed
on a semiconductor substrate of a first conductivity type
having a first concentration comprising:
a gate insulating layer formed on said substrate;
an inner gate electrode of a predetermined length and
width formed on said gate insulating layer, said inner gate
electrode including laterally opposite sidewalls along said
width of said inner gate electrode;
a first punchthrough stop region and a second
punchthrough stop region of a second concentration of said
first conductivity type wherein said second concentration of
said first conductivity type is greater than said first
concentration of said first conductivity type, said first
punchthrough stop region and said second punchthrough stop
region disposed in said substrate in alignment with said
laterally opposite sidewalls of said inner gate electrode,
respectively;
a first conductive spacer and a second conductive spacer
formed on said gate insulating layer over a portion of said
first punchthrough stop region and said second punchthrough
stop region, respectively, said first conductive spacer and
said second conductive spacer adjacent to and in electrical
contact with respective laterally opposite sidewalls of said
inner gate electrode, said first conductive spacer and said
2
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