Appeal No. 1996-2947
Application 08/203,685
second conductive spacer forming along with said inner gate
electrode a MOSFET gate electrode; and
a first source region and a first drain region of a first
concentration of a second conductivity type disposed in said
first punchthrough stop region and said second punchthrough
stop region, respectively, self-aligned with the outer edge of
said first conductive spacer and said second conductive
spacer, respectively.
The following references are relied on by the examiner:
Jain 4,949,136 Aug. 14,
1990
Okumura 5,218,221 June 8, 1993
(filed Apr. 20, 1992)
Claims 1 through 9 stand rejected under 35 U.S.C. § 103.
As evidence of obviousness, the examiner relies upon Okumura
alone as to claims 1, 2 and 5 through 9, with the addition of
Jain as to claims 3 and 4.
Rather than repeat the positions of the appellant and the
examiner, reference is made to the briefs and the answer for
the respective details thereof.
OPINION
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