Ex parte HEIL et al. - Page 2




          Appeal No. 1996-4200                                                        
          Application No. 08/330,341                                                  


          entered by the examiner (paper number 16).  Accordingly,                    
          claims 1 and 4 remain before us on appeal.                                  
               The disclosed invention relates to an integrated                       
          comparator circuit.                                                         
               Claim 1 is illustrative of the claimed invention, and it               
          reads as follows:                                                           
               1.  An integrated comparator circuit, comprising:                      
          first and second terminals for a supply voltage;                            
          first and second input terminals;                                           
          first, second, third and fourth MOSFETs each having drain,                  
          source and gate terminals and a transfer characteristic curve;              
          said first and second MOSFETs being connected in a series                   
          circuit between said first terminal for the supply voltage and              
          said first input terminal, defining a node between said first               
          and second MOSFETs being connected to the gate terminal of                  
          said fourth MOSFET;                                                         
          said second input terminal being connected to said second                   
          terminal for the supply voltage;                                            
          said third and fourth MOSFETs being connected to form and                   
          [sic] inverter stage between said first and second terminals                
          for the supply voltage;                                                     
          the transfer characteristic curve of said second MOSFET being               
          steeper than the transfer characteristic curve of said fourth               
          MOSFET;                                                                     
          said second and fourth MOSFETs each being an enhancement                    
          MOSFET;                                                                     

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