Appeal No. 1996-2246
Application No. 08/052,910
amendment after final rejection was filed October 17, 1994 and
was entered by the Examiner.
The claimed invention relates to a method for producing a
via hole to a doped region in a semiconductor device.
Appellants assert at pages 3-5 of the specification that their
invention avoids the etching of active structures and the use
of auxiliary layers in the contact area thus eliminating the
need to remove these layers after via hole production. More
particularly, Appellants’ specification indicates that the
foregoing problems are addressed by using an etch-stop layer
of boron-doped amorphous silicon in the region of the via
hole.
Claim 1 is illustrative of the invention and reads as
follows:
1. A method for producing a via hole to a doped region in a
semiconductor device, comprising the steps of:
providing a substrate;
generating in the substrate a doped region that is
laterally limited by insulating regions, which insulating
regions arepositioned at least on a surface of the substrate;
depositing an undoped, amorphous silicon layer surface-
wide on the substrate;
2
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