Appeal No. 1996-2246
Application No. 08/052,910
producing a doped region in the amorphous silicon layer
that overlies the doped region in the substrate by masked
implantation of boron;
selectively removing undoped amorphous silicon in the
amorphous silicon layer relative to the doped region in
the amorphous silicon layer by wet chemical etching with
potassium hydroxide solution;
producing an insulating layer surface-wide on the
substrate; and
forming the via hole in the insulating layer by
selectivelyanisotropically etching the insulating layer to
remove a portionthereof that overlies the doped region in the
amorphous silicon
layer, while employing the doped region in the amorphous
silicon layer as an etching stop in the formation of the via
hole.
The Examiner relies on the following prior art:
Henry 4,231,820 Nov. 04,
1980
Komatsu et al. (Komatsu) 4,438,556 Mar, 27,
1984
Ishii et al. (Ishii) 4,569,123 Feb. 11,
1986
Ueno et al. (Ueno) 4,629,520 Dec. 16,
1986
Chan et al. (Chan) 4,868,138 Sep. 19,
1989
Ogura et al. (Ogura) 4,992,389 Feb. 12,
1991
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