Appeal No. 1997-2023
Application No. 08/197,497
a second source as recited in claim 4 on appeal. As shown by
Figure 3 of Sarin ‘574, the halide precursor gas enters reaction
chamber 21 through the inlet tube 10 and is distributed by the
gas distributor 22 across the entire cross section of the
reaction chamber 21, with a portion of the halide gas passing
through tube 28 to react with metal 27 while the remainder of the
precursor halide gas flows outside of tube 28 to react with metal
26 (Sarin ‘574, col. 4, l. 62-col. 5, l. 4). Accordingly, Sarin
‘574 does not disclose or suggest any unreacted portion of a
first precursor halide gas or that this portion of the first
halide gas later contacts the second metal source (silicon), as
required by the subject matter of claim 4 on appeal.
The examiner has applied Punola as a secondary reference in
the rejection of claims 13-19. Punola was cited by the examiner
for its teaching of a CVD process using alloys of aluminum as the
“reactivity-altering material” (Answer, page 7). Accordingly,
Punola does not remedy the deficiencies noted above with respect
to the Sarin ‘384 and ‘574 references. Furthermore, the examiner
has not explained why one of ordinary skill in the art would have
combined the two Sarin references to two phase ceramic oxide
coatings with the aluminide diffusion coating process and
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