Appeal No. 1997-3031
Application No. 08/411,509
1. A process for preparing a film formed on an
oxide material on a substrate by using an apparatus
comprising a vacuum chamber in which an oxidizing
gas of O including O is supplied near the substrate2 3
so that pressure around the substrate is increased
to
-7 -6
5 x 10 to 5 x 10 Torr while maintaining a high vacuum
-11 -9
of 1 x 10 to 1 x 10 Torr around an evaporation source
and Knudsen cell evaporation sources arranged in the
vacuum chamber wherein the substrate is heated, molecular
beam of constituent atoms of the oxide excluding oxygen
are
supplied from the K cell evaporation sources, an
oxidizing gas of O including about 70 volume percent O2 3
is locally supplied to the vicinity of the substrate and a
growing
thin film is illuminated by ultraviolet having a
wavelength of 200 nanometers or less so as to increase
the O content of the oxidizing gas.
3
The references of record relied upon by the examiner are:
DeLozanne 5,004,721 Apr.
2, 1991
Berkley et al. (Berkley), "Ozone processing of MBE grown
YBa Cu 0 films," IEEE Transactions on Magnetics, Vol. 25, No.
2 3 7-x
2, March 1989, pp. 2522-2525.
Sawa et al. (Sawa), "Effect of using pure ozone on in situ
molecular beam epitaxy of YBa Cu 0 thin films at low
2 3 7-x
pressure," Appl. Phys. Lett. 64(5) Jan. 1994, pp. 649-651.
Siegrist et al. (Siegrist), "Growth of YBa Cu 0 in pure ozone
2 37-*
irradiated with ultraviolet light," Appl. Phys. Lett. 60(20),
May 1992, pp. 2489-2490.
Yokoyama et al. (Yokoyama), "Atomic Layer Growth of Bi-Sr-Ca-
Cu-0 by Molecular Beam Epitaxy Using Ozone under UV
Irradiation," Jpn. J. Appl. Phys. Vol. 30, No. 1B, Jan. 1990,
2
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