Appeal No. 1997-3031 Application No. 08/411,509 1. A process for preparing a film formed on an oxide material on a substrate by using an apparatus comprising a vacuum chamber in which an oxidizing gas of O including O is supplied near the substrate2 3 so that pressure around the substrate is increased to -7 -6 5 x 10 to 5 x 10 Torr while maintaining a high vacuum -11 -9 of 1 x 10 to 1 x 10 Torr around an evaporation source and Knudsen cell evaporation sources arranged in the vacuum chamber wherein the substrate is heated, molecular beam of constituent atoms of the oxide excluding oxygen are supplied from the K cell evaporation sources, an oxidizing gas of O including about 70 volume percent O2 3 is locally supplied to the vicinity of the substrate and a growing thin film is illuminated by ultraviolet having a wavelength of 200 nanometers or less so as to increase the O content of the oxidizing gas. 3 The references of record relied upon by the examiner are: DeLozanne 5,004,721 Apr. 2, 1991 Berkley et al. (Berkley), "Ozone processing of MBE grown YBa Cu 0 films," IEEE Transactions on Magnetics, Vol. 25, No. 2 3 7-x 2, March 1989, pp. 2522-2525. Sawa et al. (Sawa), "Effect of using pure ozone on in situ molecular beam epitaxy of YBa Cu 0 thin films at low 2 3 7-x pressure," Appl. Phys. Lett. 64(5) Jan. 1994, pp. 649-651. Siegrist et al. (Siegrist), "Growth of YBa Cu 0 in pure ozone 2 37-* irradiated with ultraviolet light," Appl. Phys. Lett. 60(20), May 1992, pp. 2489-2490. Yokoyama et al. (Yokoyama), "Atomic Layer Growth of Bi-Sr-Ca- Cu-0 by Molecular Beam Epitaxy Using Ozone under UV Irradiation," Jpn. J. Appl. Phys. Vol. 30, No. 1B, Jan. 1990, 2Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 NextLast modified: November 3, 2007