Appeal No. 1997-3338
Application No. 08/402,252
unpatentable over the combined teachings of Koyanagi, Scovell,
Lee, Sun, and Sandhu, (2) rejection of claims 4 and 8 under 35
U.S.C. § 103 as unpatentable over the combined teachings of
Koyanagi, Scovell, Tsang, Shappir, Lee, Sun, and Sandhu, and
(3) the rejection of claim 13 under 35 U.S.C. § 103 as
unpatentable over the combined teachings of Koyanagi, Scovell,
Tsang, Shappir, Lee, Sun, and Sandhu.
As a final point, we direct the examiner’s attention to
Lee’s discussion of Japanese Laid-Open Publication No. 63-
99546 (JP ‘546), which states:
Japanese Laid-Open Publication No. 63-99546 (by
Shinpei Lijima et al.), discloses a method to
improve wiring reliability and to enable the
formation of a multilayer interconnection, wherein a
metallic wiring layer is formed on a substrate
having contact holes and steps, by means of heating
and fusing the metallic wiring layer. More
particularly, Shinpei Lijima et al. teaches a method
for manufacturing a semiconductor device, which
comprises the steps of forming multiple devices on a
semiconductor substrate, depositing an insulation
layer on the multiple devices, forming in the
insulation layer contact holes reaching a
predesignated portion of the device, forming a
titanium nitride film on the surface of the
insulation layer and contact holes, depositing a
metallic wiring layer on the whole surface of the
titanium nitride film and then heating the metallic
layer so that it is fused and made to flow to
8
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