Appeal No. 1997-3635
Application No. 08/498,357
one of ordinary skill in the art who sets out to solve the
problem and who had before him in his workshop the prior art,
would have been reasonably expected to use the solution that
is claimed by the Appellants.
We find that Yu teaches a process for forming multiple
layers as the emitter diffusion source and the associated
contact structure. Specifically, Yu in col. 4, line 52
through col. 5, line 6, discloses steps of forming titanium
layer 120 and amorphous silicon layer 121 through amorphous
silicon layer
116 upon a semiconductor substrate. Yu is concerned with
removal of the undesired native oxide, formed over silicon
layer 116 during the anneal and diffusion step, prior to the
formation of titanium layer 120. However, we fail to find any
particular teachings in Yu requiring particular conditions for
depositing the silicon layer over the titanium layer to avoid
oxidation of the metal layer.
Analyzing Japan '414, we find that a method and a device
for processing semiconductor devices in a continuous state of
reduced pressure are disclosed. Japan '414 specifically
teaches a series of chambers with reduced pressure for
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