Appeal No. 1997-3769
Application 08/418,257
improving the
coverage in contact vias through the manner in which aluminum
is deposited therein.
Representative independent claim 1 is reproduced as
follows:
1. A method for forming an aluminum contact in an
integrated circuit, comprising the steps of:
forming an insulating layer over a conducting layer;
forming an opening through the insulating layer to expose
a portion of the conducting layer;
forming a layer including a refractory metal over the
insulating layer, and sidewalls and a bottom of the opening;
raising the temperature of the integrated circuit from
below approximately 350EC to a value between approximately
400EC and approximately 500EC;
during said step of raising the temperature, beginning to
deposit aluminum on the layer including the refractory metal
and in the opening;
after said step of raising the temperature, continuing
said step of depositing aluminum, wherein aluminum is
deposited at a temperature of between approximately 400EC and
approximately 500EC;
during said steps of beginning to deposit aluminum and
continuing depositing aluminum, controlling the rate at which
aluminum is deposited to allow the deposited aluminum to
migrate into the opening so as to provide a substantially
complete fill thereof; and
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