Ex parte EVANS et al. - Page 2

          Appeal No. 1997-3915                                                        
          Application No. 08/640,572                                                  

          ABO , the B-sites being filled with a dopant element that has an            
          oxidation state greater than +4.  Claim 1 is illustrative of the            
          claimed invention, and it reads as follows:                                 
               1. An improved ferroelectric FET structure comprising:                 
               a semiconductor layer having first and second contacts                 
          thereon, said first and second contacts being separated from one            
               a bottom electrode; and                                                
               a ferroelectric layer sandwiched between said semiconductor            
          layer and said bottom electrode, said ferroelectric layer                   
          comprising a perovskite structure having A and B sites and                  
          having a chemical composition ABO  wherein said B-sites are                 
          filled with a first element, a second element, or a dopant                  
          element that has an oxidation state greater than +4, said dopant            
          element being present in said ferroelectric layer in sufficient             
          concentration to impede shifts in the resistance measured                   
          between the first and second contacts with time, wherein all of             
          said first, second and dopant elements are present in said                  
          ferroelectric layer.                                                        
               The prior art references of record relied upon by the                  
          examiner in rejecting the appealed claims are:                              
          Miller et al. (Miller)        5,116,643                May  26,             
          Swartz et al. (Swartz)        5,198,269                Mar. 30,             
          Shirasaki1                    Sho 58-46680        Mar. 18, 1983             

               Our understanding of this reference is based upon a translation1                                                                     
          provided by the Scientific and Technical Information Center of the Patent and
          Trademark Office.  A copy of the translation is enclosed with this decision.

Page:  Previous  1  2  3  4  5  6  7  8  Next 

Last modified: November 3, 2007