Appeal No. 1997-3915
Application No. 08/640,572
ABO , the B-sites being filled with a dopant element that has an
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oxidation state greater than +4. Claim 1 is illustrative of the
claimed invention, and it reads as follows:
1. An improved ferroelectric FET structure comprising:
a semiconductor layer having first and second contacts
thereon, said first and second contacts being separated from one
another;
a bottom electrode; and
a ferroelectric layer sandwiched between said semiconductor
layer and said bottom electrode, said ferroelectric layer
comprising a perovskite structure having A and B sites and
having a chemical composition ABO wherein said B-sites are
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filled with a first element, a second element, or a dopant
element that has an oxidation state greater than +4, said dopant
element being present in said ferroelectric layer in sufficient
concentration to impede shifts in the resistance measured
between the first and second contacts with time, wherein all of
said first, second and dopant elements are present in said
ferroelectric layer.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Miller et al. (Miller) 5,116,643 May 26,
1992
Swartz et al. (Swartz) 5,198,269 Mar. 30,
1993
Shirasaki1 Sho 58-46680 Mar. 18, 1983
Our understanding of this reference is based upon a translation1
provided by the Scientific and Technical Information Center of the Patent and
Trademark Office. A copy of the translation is enclosed with this decision.
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