Appeal No. 1997-3915
Application No. 08/640,572
The examiner states (Answer, page 4) that it would have
been obvious in view of Miller and Swartz to use Pb(Mg Nb )O
1/3 2/3 3
for the ferroelectric material of Shirasaki, as Swartz also
lists Pb(Mg Nb )O as a known PLZT ferroelectric material. The
1/32/3 3
examiner points to Pb(Mg Nb )O because it includes niobium
1/32/3 3
(one of the materials disclosed by appellants as an appropriate
dopant). Appellants argue (Brief, page 3) that neither Swartz
nor Miller provides motivation for using any of the compositions
taught therein in a ferroelectric FET memory device such as that
of Shirasaki. However, though all recitations of Pb(Mg Nb )O
1/3 2/3 3
and other materials including niobium, tantalum, or tungsten
(appellants' disclosed dopants) are for applications other than
memory devices, as stated above, both Swartz and Miller indicate
that certain compositions are useful for memory structures.
Accordingly, although we agree that neither Swartz nor Miller
suggests using Pb(Mg Nb )O , or other compositions including
1/3 2/33
niobium, tantalum, or tungsten, in a ferroelectric FET memory
device, it would have been obvious to combine the compositions
of Swartz and Miller disclosed as being appropriate for memory
devices with Shirasaki's FET memory device.
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