Appeal No. 1997-3915
Application No. 08/640,572
(which is greater than +4) are particularly useful for
electrical devices such as random access memory devices. (See
column 1, lines 13-18, and column 2, lines 43-64.) Similarly,
Swartz discloses (column 1, lines 15-18 and 41-44) that
ferroelectric thin films with perovskite structures are useful
for nonvolatile semiconductor memories. Swartz further lists as
particular examples PbTiO or SrTiO with PZT, PbZrO ,3 3 3
(Pb,La)TiO , or (Pb,La)ZrO when the ferroelectric layer is to3 3,
be used in a nonvolatile semiconductor memory.
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