Appeal No. 1997-3916
Application No. 08/429,650
BACKGROUND
The appellants' invention relates to a field effect transistor with a self-aligned anti-punchthrough implant
channel. An understanding of the invention can be derived from a reading of exemplary claim 25, which is
reproduced as follows:
25. A field effect transistor having an aligned anti-punchthrough buried implant channel,
comprising:
a semiconductor substrate having a principle surface with device areas and field
oxide areas thereon;
a gate oxide layer on said devices areas composed of thermal oxidation;
a patterned polysilicon layer forming gate electrodes on said gate oxide layers;
a buried layer of implanted boron ions in said substrate, below and centered on
said gate electrode and forming a buried anti-punchthrough implant channel which is
narrower than said gate electrode;
lightly doped drain (LDD) regions adjacent to said gate electrode;
sidewall spacers on sidewalls of said gate electrode composed of silicon oxide;
source/drain regions in said device area, formed by implantation and thereby
having a field effect transistor with said buried anti-punchthrough implant channels under
and centered on said gate electrode.
The prior art references of record relied upon by the examiner in rejecting the appealed
claims are:
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