Appeal No. 1998-1211
Application No. 08/448,955
We consider first the examiner's rejection of claims 4-6
and 15-25. These claims require the formation of a periodic
sequence of homogeneous markers by periodically interrupting
the deposition of the material to be etched in the presence of
another material. While Fujii discloses forming a gaseous
adsorption layer during an interruption in forming the first
and second insulating layers to be etched, Fujii does not
teach or suggest appellants' claimed step of periodically
interrupting said plasma in the presence of at least one
ambient or second material other than the material to be
deposited to form a periodic sequence of homogeneous markers.
That is, Fujii does not teach that the plasma deposition takes
place in the presence of an ambient material which forms the
marker. Rather, the English translation of Fujii states that
"[a]fter the first interlayer insulating film (11) has been
formed, a [illegible] formation device is leaked by using an
adsorption gas" (page 7 of translation). Also, while Flamm
discloses an interrupting pulsing of the plasma during
deposition, Flamm does not teach that such pulsing results in
the formation of an adsorption layer or marker, and the
examiner has not established on this record that one of
-4-
Page: Previous 1 2 3 4 5 6 7 8 Next
Last modified: November 3, 2007