Appeal No. 1998-2887
Application No. 08/630,111
Claim 14 is the only independent claim on appeal, and it
reads as follows:
14. A novel plug structure for stacked contacts and metal
contacts on a Static Random Access Memory (SRAM) cell having
thin film transistors, on a partially completed semiconductor
substrate having device areas and field oxide areas and
further having field effect transistors (FETs) and word lines
formed from a first polysilicon layer and Vss ground plate
formed from a second polysilicon layer comprising of:
a first insulating layer on said substrate;
a patterned N doped third polysilicon layer on said first+
insulating layer forming first and second gate electrodes for
a first and second thin film transistor;
a second insulating layer forming a gate oxide on said
first and second gate electrodes;
a patterned N type amorphous silicon layer on said second
insulating layer with P doped areas over said first and+
second gate electrodes and with undoped P type areas for+
channel regions on said first and second thin film
transistors; and
said channel regions contiguous with said P-doped areas
and said P-doped areas extending over areas of the other said
gate electrode and on said second insulating layer;
said patterned N type amorphous silicon layer having
openings in said P-doped areas of said amorphous polysilicon
layer over said other gate electrode area and to said second
insulating layer;
a third insulating layer over said patterned N type
amorphous silicon layer having openings aligned over and
larger in size than said openings in said P doped portions of
said amorphous silicon layer,
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