Appeal No. 1998-2887
Application No. 08/630,111
said third insulating layer openings extending to said
amorphous layer and further to said third polysilicon layer,
and said third insulating layer having other openings to
device areas elsewhere on said substrate;
conducting plugs in said third insulating layer openings
and thereby having low resistance ohmic stacked contacts for
said thin film transistors and other conducting plugs in said
other openings elsewhere to device areas on said substrate;
a patterned first metal layer forming electrical
interconnections, and thereby having said novel plug structure
on said SRAM cell.
The references relied on by the examiner are:
Krishna 4,639,274 Jan. 27,
1987
Kobayashi et al. (Koyabashi) 0 603 622 Jun. 29,
1994
(European Patent Application)
Claims 14 through 18 stand rejected under 35 U.S.C. § 103
as being unpatentable over the admitted prior art Figures 1
through 5 in view of Kobayashi and Krishna.
Reference is made to the final rejection, the brief and
the answer for the respective positions of the appellants and
the examiner.
OPINION
The obviousness rejection of claims 14 through 18 is
reversed.
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