Ex parte WUU et al. - Page 5

          Appeal No. 1998-2887                                                        
          Application No. 08/630,111                                                  

          electrically short the P  layer 18 to the N  layer 14 to form a+               +                                  
          low-resistance ohmic contact (Fig. 9).”                                     
               Although element 21 in Kobayashi may appear to be a                    
          “contact through an aperture in an amorphous silicon layer                  
          (16)” (Answer, page 5), it is really a silicon nitride                      
          passivation layer (column 8, lines 4 through 19).  We agree                 
          with the examiner (Answer, page 5) that Krishna forms “a                    
          contact to a polysilicon layer (20) through an aperture in an               
          insulating layer.”  The polysilicon layer 20 in Krishna is,                 
          however, one of two polysilicon plates 16 and 20 that are                   
          separated from each other by an oxide layer 18 to form a                    
          capacitor 12.  The metal contact 22 is a contact for the                    
          capacitor 12.                                                               
               Based upon the foregoing, we agree with appellants that                
          neither Krishna nor Kobayashi teaches or would have suggested               
          the claimed low resistance ohmic stacked contact located in                 
          the two differently sized openings (i.e., the stacked contact               
          24 extending through the smaller opening 4 in the amorphous                 
          silicon layer 18 to make contact with the third polysilicon                 
          layer 14).                                                                  


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