Ex parte WUU et al. - Page 4




          Appeal No. 1998-2887                                                        
          Application No. 08/630,111                                                  


               The examiner acknowledges (Final rejection, page 3) that               
          “the admitted Prior Art Figures 1-5 fail to teach an amorphous              
          silicon layer and a gate conducting plug.”  According to the                
          examiner (Answer, page 5):                                                  
               Kobayashi et al was used to show that the level of                     
               ordinary skill in the art includes knowledge of                        
               forming a contact through an aperture in an                            
               amorphous silicon layer (16). . . .  Krishna was                       
               used to show that the level of ordinary skill in the                   
               art includes knowledge of forming a contact to a                       
               polysilicon layer (20) through an aperture in an                       
               insulating layer.  Hence, the two missing features                     
               in Applicants’ Admitted Prior Art Figures are                          
               provided by the two references.                                        
               The examiner concludes (Answer, page 5) that “it would                 
          have been obvious to use a contact to a polysilicon layer                   
          through an opening in an insulating layer and an amorphous                  
          silicon layer in view of the teachings of Kobayashi et al and               
          Krishna.”                                                                   
               Appellants argue (Brief, pages 7 and 8) that the applied               
          references do not teach applicants’ plug structure, namely,                 
          the larger contact opening aligned over the other opening so                
          that “[w]hen the metal plug 24 (Fig. 8) is formed in the                    
          opening 6 (and 4), the exposed P  amorphous layer 18 in+                                           
          opening 6 and the exposed N  polysilicon layer 14 in opening 4+                                                

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