Ex parte LIEN - Page 1




          The opinion in support of the decision being entered today was not written for
          publication and is not binding precedent of the Board.                      

                                                            Paper No. 19              

                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                    _____________                                     
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                    _____________                                     
                               Ex parte CHUEN-DER LIEN                                
                                   _____________                                      
                                Appeal No. 1998-2896                                  
                             Application No. 08/558,564                               
                                   ______________                                     
                                      ON BRIEF                                        
                                   _______________                                    

          Before HAIRSTON, GROSS, and BLANKENSHIP, Administrative Patent              
          Judges.                                                                     
          HAIRSTON, Administrative Patent Judge.                                      

                                 DECISION ON APPEAL                                   
               This is an appeal from the final rejection of claims                   
          30 through 37, 40 and 41.                                                   
               The disclosed invention relates to a method of forming                 
          polycide over a semiconductor structure with an irregular                   
          upper surface.  The polycide is used to form the gate                       
          electrodes of field effect transistors.                                     

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