Appeal No. 1998-2896
Application No. 08/558,564
on the first polysilicon layer in conjunction with the
silicide layer as taught by Saitoh because such processing
would obviate the need for cleaning the surface of the first
polysilicon and would enable the formation of the silicide on
a polysilicon without separation at their interface.”
In Saitoh, a sputtering technique was used to place the
second polycrystalline silicon film 7 over the first
polycrystalline silicon film 3 and the natural oxide 4 located
thereon (column 3, line 59 through column 4, line 3). The
same sputtering technique was thereafter used to deposit the
metal silicide film 5 over the second polycrystalline silicon
film
7 (column 4, lines 4 through 29). The second polycrystalline
silicon film 7 is used by Saitoh to bury the natural oxide 4
as opposed to removing the natural oxide by a problem-prone
sputter etching technique (column 1, lines 27 through 51).
According to Saitoh (column 1, lines 51 through 53), “[d]uring
the sputter etching, a great quantity of particles are
produced, which causes deterioration in product yield rate.”
Notwithstanding the total lack of a need by Tamura to
“clean” the surface of the polycrystalline silicon layer
7
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