Appeal No. 1996-2702
Application No. 08/093,983
and 11, was approved for entry by the Examiner. Accordingly,
only the rejection of claims 4, 6, 7, 9, 10, and 12 is before us
on appeal.
The claimed invention relates to a method for forming a
self-aligned contact in a MOS-type semiconductor device.
Claim 7 is illustrative of the invention and reads as
follows:
7. A method of fabricating a MOS device, comprising
the steps:
forming a gate insulating film on a semiconductor
substrate;
forming a gate electrode film on the gate insulating
film;
forming a first insulating film on the gate electrode
film;
forming a first photoresist film on the first
insulating film, the first photoresist film being patterned;
patterning the gate electrode film and the first
insulating film by using the first patterned photoresist
film as a mask to form a patterned gate electrode film and
first insulating film which are higher than the
semiconductor substrate;
forming low concentration impurity source and drain
layers in a face of the semiconductor substrate by using the
patterned gate electrode film as a mask;
forming a second insulating film on an exposed surface
of the gate insulating film and the first insulating film;
2
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