Appeal No. 1997-3690
Application 08/427,163
1. A method of forming a sidewall spacer structure of
an integrated circuit, comprising the steps of:
forming a gate over a portion of a substrate;
forming a metal oxide layer over the gate and a portion
of the substrate, wherein the metal oxide layer is in direct
contact with the gate and a portion of the substrate; and
forming oxide sidewall spacers adjacent to the sides of
the gate and on top of the metal oxide layer.
10. A method of forming a sidewall spacer structure of
an integrated circuit, comprising the steps of:
forming a gate over a portion of a substrate;
forming a metal oxide layer over the integrated circuit,
wherein the metal oxide layer is in direct contact with the
gate and a portion of the substrate;
forming an oxide layer over the metal oxide layer;
patterning and etching the oxide layer to form sidewall
oxide spacers adjacent to each side of the gate and over a
portion of the metal oxide layer, wherein the metal oxide
layer is an etch stop to the oxide layer during the etching of
the oxide layer; and
removing the metal oxide layer not covered by the
sidewall oxide spacers.
The references relied on by the Examiner are as follows:
Mizuno 5,119,152 Jun. 2, 1992
(filed March 19, 1991)
Hunter 4,356,623 Nov. 2, 1982
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