Ex parte CHEN et al. - Page 11




          Appeal No. 1997-3690                                                        
          Application 08/427,163                                                      


               Upon our reading of claim 4, we find that the claim                    
          requires that a lightly doped drain region be formed by                     
          implantation through the metal oxide layer.  We fail to find                
          that the Examiner has come to grips with this limitation and                
          upon our review of the references we fail to find that either               
          reference teaches this limitation.  Therefore we will not                   
          sustain the Examiner's rejection of claim 4.                                
               In regard to the rejection of claims 7, 10, 11, 13, 15                 
          and 16 under 35 U.S.C. § 103 as being unpatentable over Tsang               
          in view of Mizuno and the rejection of claim 12 under 35                    
          U.S.C. § 103 as being unpatentable over Tsang in view of                    
          Mizuno and Hunter, Appellants argue on pages 8 through 11 the               
          Examiner has failed to show any motivation or incentive for                 
          combining the teachings of these references.  Appellants argue              
          that Mizuno provides no incentive for forming a metal oxide                 
          layer in direct contact with the gate and a portion of the                  
          substrate.  Appellants further argue that Hunter does not                   
          disclose any benefits particularly associated with forming the              
          silicone oxide layer spacer in direct contact with the gate or              
          a portion of the substrate.                                                 
               The Federal Circuit states that "[t]he mere fact that the              
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