Appeal No. 1997-3696 Page 2
Application No. 08/473,419
THE INVENTION
Appellant's invention relates to a method of forming a compound semiconductor material, a
method of making silicon (Si) and germanium (Ge) crystals, and a crystalline material. Claims 61, 65,
and 66 are illustrative:
61. A method of forming a compound semiconductor material, comprising the steps of:
(a) providing a vessel having a bottom;
(b) placing a flexible compliant carbon cloth containing substantially no contaminants adverse to
the formation of said compound semiconductor material on said bottom of said vessel;
(c) forming said compound semiconductor material in crystalline form in said vessel and on said
cloth; and
(d) removing said compound semiconductor material in crystalline form from said vessel and
from said cloth.
65. A method of making Si and Ge crystals comprising the steps of:
(a) providing a vessel having inner walls and containing one of molten Si and Ge and water
thereover, said water containing boron oxide; and
(b) cooling the molten Si or Ge to crystalline form progressively first in a predominantly
horizontal direction from the bottom center of said vessel to the inner walls of said vessel and then
predominantly vertically from the bottom toward the top of said vessel to form said crystal.
66. A crystalline material having a resistivity in the range of from about 0.7 to about 10 ohm-
cm and an electron mobility greater than 3000 cm /volt-second.2
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 Next
Last modified: November 3, 2007