Appeal No. 1998-0078
Application No. 08/478,814
damage layer formed by the main etching treatment; and transfer means for transferring
the object from the etching apparatus to the post-processing apparatus,
wherein:
the post-processing apparatus includes a processing chamber, first gas supply
means for supplying an O gas or a mixture of an O gas and an inert gas into the2 2
processing chamber, second gas supply means for supplying a halogencontaining gas or
a mixture of a halogen-containing gas and an inert gas into the processing chamber, and
switching means for switching a gas supply by the first gas supply means to a gas supply
by the second gas supply means;
the object, after the main etching treatment, is treated with a plasma treatment
produced by the gas supply by the first gas supply means and consisting essentially of
an O gas or a mixture of an O and an inert gas so as to remove a resist film remaining2 2
on the object and a polymer deposited on the surface of the object; and
after substantially completing the plasma treatment, the gas supply through the
first and second gas supply means is switched by the switching means to perform a
plasma treatment with a plasma produced by a gas mixture consisting essentially of a
halogen-containing gas and an O gas or a halogen containing gas, an O gas, and an inert2 2
gas so as to remove an impurity layer formed by the main etching.
27. The equipment according to claim 26, wherein said switching means includes an end
point detection device for detecting completion of the plasma process by means of
plasma produced from the gas including O gas in said post-processing apparatus, and
2
performs switching of gas in accordance with an instruction from said end point
detection device.
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