Appeal No. 1998-1578
Application No. 08/543,827
With respect to Scott, we initially note that the
application which matured into the Scott patent was filed on
October 6, 1993, which is before the earliest effective filing
date of the present application. Also, the Scott patent names
Michael C. Scott, Carlos A. Paz de Araujo, and Larry D.
MacMillan as joint inventors. By contrast, the present
application does not include MacMillan as a joint inventor but
instead lists nine additional inventors not named in the Scott
patent. Thus, we determine that Scott is available as prior
art under 35 U.S.C.
§ 102(e) (1999).
Scott teaches a method for making a capacitor comprising:
(i) forming silicon dioxide 43 by thermal oxidation in a
furnace; (ii) sputter depositing a titanium layer 44, a
titanium nitride layer 45, and a platinum layer 46 to form a
substrate 47; (iii) using a BST precursor solution to form a
dielectric BST layer 48 having a thickness of about 140 nm;
(iv) annealing the BST in an oxygen furnace at 750EC; and then
(v) depositing an electrode 49. (Fig. 7; column 8, lines 21-
46.)
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