Appeal No. 1999-0768 Page 2
Application No. 08/878,136
be derived from a reading of exemplary claim 14, which is
reproduced below.
14. A substrate with a high capacitance
storage node, comprising:
a trench formed in a substrate having
sidewalls and a bottom;
a projection of said substrate centrally
positioned within said trench projecting above
said bottom of said trench;
a dielectric material coated on said
sidewalls and bottom of said trench and on said
projection of said substrate within said trench;
and
a conductive material filling said trench
on top of said dielectric material.
The sole prior art reference of record relied upon by the
examiner in rejecting the appealed claims is:
Keiser et al. (Keiser) 4,671,970 Jun. 09,
1987
Claims 14, 15 and 17-19 stand rejected under 35 U.S.C. §
102 as being anticipated by Keiser.
We refer to the brief and to the answer for the opposing
viewpoints expressed by appellants and the examiner concerning
the above-noted rejection.
OPINION
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007