Appeal No. 1999-0768 Page 5
Application No. 08/878,136
a high capacitance storage node, the dielectric is located
between the two conductors; that is, the centrally located
substrate projection inside the trench is, in effect, an
island projection inside the trench (see page 4, lines 3 and 4
of the specification). Viewed another way, the conductive
material that fills the trench surrounds the centrally
positioned dielectric-coated projection of the substrate
inside the trench to form the high capacitance storage node.
See appellants’ drawing figures 3 and 4, for example.
On the other hand, Keiser forms multiple trenches, each
filled with a dielectric material. The portion of the
substrate of Keiser reproduced and highlighted by the examiner
at page 6 of the answer is not a projection centrally located
within a trench so as to form part of a high capacitance
storage node, as herein claimed. Rather, that reproduced and1
1The claimed subject matter does not read on a substrate
including two separately filled trenches separated by a
portion of the substrate that extends between those two
separate trenches, and with each separate trench not having
projections centrally located there within. This is so since
the singular article “a” is employed in the appealed claims to
describe the trench, the projection and the high capacitance
storage node and in light of the described location of the
projection within the single trench. This interpretation of
the claim language is consistent with appellants’
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