Appeal No. 1999-0768 Page 4
Application No. 08/878,136
the process of forming a final product substrate and hence
forms intermediate substrate structure(s) that include
polysilicon, the examiner has not established that any fully
described intermediate structure of Keiser meets appellants’
claimed subject matter.
For example, each of appealed claims 14, 15 and 17
require a substrate having a trench formed therein wherein a
projection of the substrate is centrally positioned within the
trench and projects above the bottom of the trench. The
sidewalls and bottom of the trench and the centrally located
substrate projection inside the trench are coated with a
dielectric material. The coated trench is filled with a
conductive material and the trench and projection therein are
arranged so as to provide the substrate with a high
capacitance storage node. In other words, the conductive
material that fills the dielectric coated trench serves as one
conductor of a capacitor with the substrate serving as the
other conductor with a dielectric coating therebetween. See
the sentence bridging pages 15 and 16 of appellants’
specification. In order for the claimed substrate to comprise
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