Ex parte CHITTIPEDDI - Page 1




             The opinion in support of the decision being entered today was not written
                    for publication and is not binding precedent of the Board.        

                                                                 Paper No. 22         

                       UNITED STATES PATENT AND TRADEMARK OFFICE                      
                                     ____________                                     
                          BEFORE THE BOARD OF PATENT APPEALS                          
                                   AND INTERFERENCES                                  
                                     ____________                                     
                             Ex parte SAILESH CHITTIPEDDI                             
                                     ____________                                     
                                 Appeal No. 1999-1576                                 
                              Application No. 08/347,527                              
                                     ____________                                     
                                       ON BRIEF                                       
                                     ____________                                     
          Before HAIRSTON, RUGGIERO, and GROSS, Administrative Patent                 
          Judges.                                                                     
          HAIRSTON, Administrative Patent Judge.                                      



                                  DECISION ON APPEAL                                  
               This is an appeal from the final rejection of claims 15 and            
          18 through 36.                                                              
               The disclosed invention relates to a semiconductor                     
          integrated circuit that has two selectively grown epitaxial                 
          layers formed on the top surface of two separate active regions             
          of the integrated circuit.  A bipolar transistor is formed on               







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