Ex Parte BAYRAKTAROGLU et al - Page 2




               Appeal No. 1999-1850                                                                                                  
               Application No. 08/870,406                                                                                            


               transistors in the common-emitter stage are connected to emitters of transistors in the common-                       
               base stage.  Since the temperature is uniform, based on the low bias applied, current levels on the                   
               collectors in the common-emitter stage are uniform.  The collector bias in the common base stage                      
               is substantially higher, which results in a higher junction temperature.  However, even though                        
               there are temperature variations between emitters of the common-base cells, no thermal runaway                        
               can occur because the current of each emitter finger is limited by the collector current of the                       
               common-emitter cells.                                                                                                 


               Representative independent claim 1 is reproduced as follows:                                                          
                       1.   A device for controlling thermal runaway comprising:                                                     
                       a common-emitter cell and a common-base cell;                                                                 
                       each cell having a first subcell and a second subcell;                                                        
                       said first and second subcell of the common emitter cell having at least one transistor;                      
                       said first and second subcell of the common-base cell having at least one transistor;                         
                       each transistor of the subcells in the common-emitter cell and common-base cell further                       
               comprising an emitter, a collector and a base; and                                                                    
                       the collectors of each subcell of the common-emitter cell being connected to the emitter                      
               of the transistor in the equivalent subcell of the common-base cell.                                                  

               The examiner relies on the following reference:                                                                       
                       Izuhara         5,497,155                                         Mar. 5, 1996                                

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