Appeal No. 2000-0239 Page 3
Application No. 08/839,843
invention can be advantageously enhanced by adding an underlayer,
an overlayer or both, all of which are made of refractory metal.
The aforementioned structure can be expanded to include vias or
studs linking interconnection lines placed at different levels of
an IC.
Claim 18, which is representative for present purposes,
follows:
18. An interconnection wiring structure of a
semiconductor integrated chip for minimizing
electromigration, comprising:
an insulated substrate;
sections of high conductivity metal on top of said
insulated substrate at a position where the
interconnection wiring is to be placed; and
coplanar sections of a diffusion barrier metal
interspersed between said sections of high
conductivity metal, wherein
said sections of high conductivity metal and diffusion
barrier metal are connected to each other to ensure
electrical continuity, and wherein said diffusion
barrier metal is selected from the group consisting of
tantalum containing nitrogen, chromium,
chromium/chromium oxide, titanium, titanium nitride,
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