Appeal No. 2000-1057
Application 09/016,100
1. The step of reacting metal with a polysilicon
layer to form metal silicide
Grewal teaches a plasma etching method wherein a first
layer of a doped polysilicon is deposited onto a substrate
followed by depositing a conductive refractory metal silicide
layer. Grewal, column 3, line 66-column 4, line 2. According to
the examiner, “Grewal is not particular about the method for
forming metal silicide.” Examiner’s Answer, page 4. Thus, it
would have been obvious to have formed the metal silicide by
reacting metal with a polysilicon layer in view of Hayashi’s
disclosure of a step of reacting metal with a conductive layer
in a semi-conductor fabrication technique. Id., pages 3-4, see
page 6.
Appellants argue that Grewal specifically teaches
that the refractory metal silicide layer is “deposited, as by
sputtering.” Reply Brief, Paper No. 10, received August 22,
2000, page 2 (referencing Grewal, columns 3 and 4). Moreover,
appellants note that in Hayashi, the step of reacting metal with
a conductive layer is utilized for an entirely different purpose.
In particular, appellants note that:
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